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• W1997942325 abstract "We present two low-noise amplifiers for the frequency range of 160 to 270 GHz. The amplifiers were fabricated using a 35-nm InP HEMT technology and designed for room temperature and cryogenic operation. A four-stage amplifier in a common-source topology and a three-stage amplifier utilizing a cascode stage at the output achieve 15 to 25-dB on-wafer measured gain from 160 to 270 GHz. When packaged in WR5 waveguide housings the amplifiers exhibit room temperature measured noise of 600 to 760 K from 160 to 220 GHz. When cryogenically cooled the three-stage amplifier shows a noise of 80 to 115 K over the range of 164 to 220 GHz. Furthermore, our initial room temperature measurements show a noise figure of 7-8 dB over the 220 to 252 GHz range for a four-stage amplifier packaged in a WR3 waveguide housing." @default.
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• W1997942325 date "2012-10-01" @default.
• W1997942325 modified "2023-10-01" @default.
• W1997942325 title "160-270-GHz InP HEMT MMIC Low-Noise Amplifiers" @default.
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• W1997942325 doi "https://doi.org/10.1109/csics.2012.6340058" @default.
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