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- W1997966097 abstract "In this letter, we have studied the temperature dependence of retention time of SiGe dot floating-gate flash memory with different tunnel oxide thicknesses, and compared the difference of the activation energy between them. The results showed that the electrons are stored in the deep trap states in semiconductor quantum dot floating gate after programing, and those states are localized at few hundred meV below the semiconductor conduction band." @default.
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- W1997966097 date "2006-05-22" @default.
- W1997966097 modified "2023-10-14" @default.
- W1997966097 title "Tunnel oxide thickness dependence of activation energy for retention time in SiGe quantum dot flash memory" @default.
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- W1997966097 doi "https://doi.org/10.1063/1.2202749" @default.
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