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• W1997967281 abstract "Impurities initially present on a Si surface can be detected using the photo I-V technique. An Al impurity deposited to a thickness less than 8 Å on a silicon substrate which was subsequently oxidized, capped by a chemically vapor deposited (CVD) SiO2 layer, and incorporated into a capacitor structure with an Al gate electrode was found mostly near the interface between the thermal and CVD oxides using the photo I-V technique. This impurity layer which was probably converted to Al2O3 showed greatly enhanced electron trapping compared to either oxide layer." @default.
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• W1997967281 date "1981-03-01" @default.
• W1997967281 modified "2023-10-06" @default.
• W1997967281 title "Detection of impurities on silicon surfaces" @default.
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• W1997967281 doi "https://doi.org/10.1063/1.329766" @default.
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