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• W1998004405 abstract "The tight-binding molecular-dynamics method is used to study melting of the reconstructed Si(113) surface. It is found that the surface starts to disorder at about 950 K which is consistent with recent low-energy-electron-diffraction and x-ray chiral melting studies. The behaviour of the simulated mean square atomic displacement and static structure factor indicate that the surface disorders anisotropically. A surface quasi-liquid which exhibits properties of both crystalline and liquid phase is observed between 1000 K and 1400 K. Surface-initiated melting of the crystal is expected to take place at a temperature slightly above 1400 K but lower than the bulk melting temperature." @default.
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• W1998004405 date "1996-09-02" @default.
• W1998004405 modified "2023-09-24" @default.
• W1998004405 title "Premelting disordering of the Si(113) surface studied by tight-binding molecular dynamics" @default.
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• W1998004405 doi "https://doi.org/10.1088/0953-8984/8/36/004" @default.
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