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- W1998017730 abstract "In this work a theoretical and experimental analysis is presented of the substrate potential drop influence on fully depleted enhancement mode silicon-on-insulator (SOI) MOSFETs. The theoretical results are compared with MEDICI numerical bidimensional simulations in order to validate the proposed model. The substrate influence on the SOI MOSFET threshold voltage and sub-threshold slope is studied. Finally, a comparison between modeled and experimental results is realized and a good agreement is found." @default.
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- W1998017730 date "1997-01-01" @default.
- W1998017730 modified "2023-10-03" @default.
- W1998017730 title "Substrate influences on fully depleted enhancement mode SOI MOSFETs at room temperature and at 77 K" @default.
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- W1998017730 doi "https://doi.org/10.1016/s0038-1101(96)00126-8" @default.
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