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- W1998021279 abstract "Nanostructured Silicon (NSi) is emerging materials in nanotechnology applications as an excellent material for nano‐optical and nano‐devices. This is largely due to the ease of fabrication and freedom of design it allows. However the properties of NSi are much depends on the preparation parameters. In this paper we present the effects of electrodes distance on NSi properties. Nanostructured Silicon has been prepared by electrochemical etching. The p‐type [100] Silicon Wafer with surface resistivity of 1–10 ohm cm−1 was used as a substrate while ethanoic hydrofluoric (HF) solution at 1:1 ratio used as an electrolyte. The samples were prepared under various etching time and electrode distance. The Photoluminescence (PL) spectrum used to characterize optical properties, while Scanning Electron Microscope (SEM) is to study the surface structure of the samples. The result shows PL intensity is increase while electrode distance is decreases and longer etching time. The SEM micrograph shows more surfaces cracking while electrode distance is decrease. The possibilities of the mechanism also explained in this paper." @default.
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- W1998021279 date "2011-01-01" @default.
- W1998021279 modified "2023-10-16" @default.
- W1998021279 title "Optimization of Electrodes Distance During Preparation of Nanostructured Silicon" @default.
- W1998021279 doi "https://doi.org/10.1063/1.2739860" @default.
- W1998021279 hasPublicationYear "2011" @default.
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