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- W1998036364 abstract "The six-layer structure of a Si1 − xGex heterobipolar transistor (HBT) with flat doping levels and abrupt junctions is grown by a silicon molecular beam epitaxy (MBE) process in one run. The process, the MBE equipment used and analytical results (secondary-ion mass spectrometry) are described. The growth temperature is reduced from 650 °C at the collector to 325 °C at the emitter contact. A Si1 − xGex base doping level of 5 × 1019 cm−3 is obtained by coevaporation of silicon, germanium and boron from an electron beam evaporator, a BN effusion cell and a high temperature graphite cell respectively. The n-type doping of 1016–1020 cm−3 (collector, emitter and emitter contact) is obtained by applying three different antimony dopant incorporation methods. Test transistors fabricated from these structures exhibited low noise, good high frequency performance (fT,fmax > 50 GHz) and low base sheet resistance (less than 1 kΩ/□)." @default.
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- W1998036364 date "1992-12-01" @default.
- W1998036364 modified "2023-09-26" @default.
- W1998036364 title "50 GHz Si1 − xGex heterobipolar transistor: growth of the complete layer sequence by molecular beam epitaxy" @default.
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- W1998036364 doi "https://doi.org/10.1016/0040-6090(92)90054-f" @default.
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