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- W1998042842 abstract "Defect states created by low temperature bias stressing or by high temperature bias annealing of a-Si:H thin film transistors have the same energy distribution in the band gap. However, subsequent thermally stimulated defect removal (TSDR) of these defect states reveals that the kinetics of defect removal are quite different. Defect states which are created by bias stress have a wide range of energy barriers to defect removal, whereas defect states created by bias annealing have only high energy barriers to defect removal. We interpret these results in terms of the different degrees of thermalisation of hydrogen within a hydrogen density of states, for the two state creation processes." @default.
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- W1998042842 date "1993-12-01" @default.
- W1998042842 modified "2023-09-27" @default.
- W1998042842 title "Thermally stimulated defect removal in hydrogenated amorphous silicon thin film transistors" @default.
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- W1998042842 doi "https://doi.org/10.1016/0022-3093(93)90525-3" @default.
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