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• W1998093183 abstract "The spin-dependent tunneling phenomenon in symmetric and asymmetric resonant semiconductor heterostructures is employed in a theoretical study to investigate the output tunnel current polarization at zero magnetic field. A simple model of the resonant tunneling structures and a simple one-electron band approximation with spin-orbit interaction are used in this work. It is shown that asymmetry in the electron distribution at the electrode regions provides spin-polarized tunnel current. An approach to optimize this spin-dependent effect is explored theoretically. In asymmetric resonant tunneling structures, we estimate theoretically that the polarization can reach 40% with a moderate applied electric field." @default.
• W1998093183 created "2016-06-24" @default.
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• W1998093183 date "2000-01-01" @default.
• W1998093183 modified "2023-10-13" @default.
• W1998093183 title "Spin-polarized electronic current in resonant tunneling heterostructures" @default.
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• W1998093183 doi "https://doi.org/10.1063/1.371872" @default.
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