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- W1998096972 abstract "A new model for ion-induced crystallization and amorphization at the interface is presented. The model is based on the general concept for ion-induced processes between two solid phases with different free energies; the presence of pure ballistic and thermally enhanced processes. The parameters that can fit quantitatively to the temperature, flux, and stopping power dependencies of crystallization/amorphization rates for Si are obtained." @default.
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- W1998096972 title "New model of ion‐induced crystallization and amorphization of silicon" @default.
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- W1998096972 doi "https://doi.org/10.1063/1.110951" @default.
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