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- W1998185579 abstract "InGaP/InGaAs/GaAs dual doped-channel field-effect transistors (DCFETs) have been fabricated and demonstrated in terms of their DC, RF, and power performances. These performances can be improved by inserting a δ-doping layer on top of the undoped Schottky layer, which can reduce the ohmic contact resistances of DCFETs." @default.
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- W1998185579 date "2000-01-01" @default.
- W1998185579 modified "2023-10-18" @default.
- W1998185579 title "Reducing source and drain resistances in InGaP/InGaAs doped-channel HFETs using -doping Schottky layer" @default.
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- W1998185579 doi "https://doi.org/10.1049/el:20000905" @default.
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