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- W1998285145 abstract "Selected material and device issues related to the performance of AlGaN/GaN HEMTs on (111) Si substrates are reported. It is shown that these devices can sustain significantly higher dc power (16 W/mm) than those grown on sapphire. Consequently smaller degradation in the device performance at higher temperatures (up to 400 °C) is demonstrated. Photoionisation spectroscopy reveals trap level of 1.85 eV, additional to two another levels found before in GaN-based HEMTs prepared on sapphire. Thus, AlGaN/GaN HEMTs on Si substrates demonstrate the viability of this technology for commercial application of high power rf devices." @default.
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- W1998285145 date "2003-05-01" @default.
- W1998285145 modified "2023-10-18" @default.
- W1998285145 title "Material and device issues of AlGaN/GaN HEMTs on silicon substrates" @default.
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- W1998285145 doi "https://doi.org/10.1016/s0026-2692(03)00067-3" @default.
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