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- W1998341591 abstract "Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations." @default.
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- W1998341591 date "2015-03-02" @default.
- W1998341591 modified "2023-10-16" @default.
- W1998341591 title "Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors" @default.
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- W1998341591 doi "https://doi.org/10.1073/pnas.1501548112" @default.
- W1998341591 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/4371916" @default.
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