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- W1998347841 abstract "Experimental results are presented which show the generation of several neutral oxide hole traps by keV electron irradiation. The density of the existing hole trap increases by about a factor of 2 after 4-keV electron irradiation. The added traps appear to be associated with broken silicon-oxygen bonds by the keV electrons. A new oxide hole trap of cross section of 1.4×10−15 cm2 is also observed in dry oxides with post-oxidation anneal in argon and post-metallization anneal in forming gas. This new hole trap may be related to an oxygen deficient or hydrogen-bond center. Heating at 370 °C anneals out the new hole trap but it does not restore the broken bonds." @default.
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- W1998347841 date "1984-02-15" @default.
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- W1998347841 title "Effects of keV electron irradiation on optical generation of hole traps in thermal oxide on silicon" @default.
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- W1998347841 doi "https://doi.org/10.1063/1.333181" @default.
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