Matches in SemOpenAlex for { <https://semopenalex.org/work/W1998468429> ?p ?o ?g. }
Showing items 1 to 93 of
93
with 100 items per page.
- W1998468429 endingPage "185" @default.
- W1998468429 startingPage "182" @default.
- W1998468429 abstract "In this article, the authors report the development of a new low temperature plasma-assisted chemical vapor deposition (PACVD) process for the growth of low resistivity, cubic tantalum nitride (TaNx) for incorporation as a diffusion barrier/adhesion promoter in emerging ultralarge-scale integrated (ULSI) multilevel metallization (MLM) schemes. TaNx films were produced in a low density plasma using tantalum pentabromide, hydrogen, and nitrogen as coreactants. The films were grown at substrate temperatures of 350–450 °C, reactor working pressures of 0.9–1.6 Torr, hydrogen flow rates between 250 and 1500 sccm, nitrogen flow rates of 100–600 sccm, and plasma power ranging from 10 to 60 W, corresponding to a power density of 0.06–0.33 W/cm2. The films were subsequently characterized by Auger electron spectroscopy, Rutherford backscattering spectrometry, x-ray diffraction, atomic force microscopy, four-point resistivity probe, and cross-sectional scanning electron microscopy. These studies indicated that the TaNx films produced were stoichiometric and carbon and oxygen free, contained bromine concentrations below 3 at. %, and exhibited resistivities as low as 150 μΩ cm. The conformality was higher than 95% in the nominally 0.3 μm, 4.5:1 aspect ratio structures. These results indicate that in the case of halide-based Ta chemistries, PACVD in a (N2+H2) plasma might be more viable than thermal CVD in a NH3 atmosphere for the deposition of TaNx for ULSI MLM applications." @default.
- W1998468429 created "2016-06-24" @default.
- W1998468429 creator A5023624056 @default.
- W1998468429 creator A5031220773 @default.
- W1998468429 creator A5048821191 @default.
- W1998468429 creator A5050498301 @default.
- W1998468429 creator A5089561878 @default.
- W1998468429 date "1999-01-01" @default.
- W1998468429 modified "2023-10-03" @default.
- W1998468429 title "Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization" @default.
- W1998468429 cites W1999703222 @default.
- W1998468429 cites W2066476974 @default.
- W1998468429 cites W2071402106 @default.
- W1998468429 cites W2096608967 @default.
- W1998468429 cites W2980117868 @default.
- W1998468429 doi "https://doi.org/10.1116/1.590533" @default.
- W1998468429 hasPublicationYear "1999" @default.
- W1998468429 type Work @default.
- W1998468429 sameAs 1998468429 @default.
- W1998468429 citedByCount "26" @default.
- W1998468429 countsByYear W19984684292012 @default.
- W1998468429 countsByYear W19984684292013 @default.
- W1998468429 countsByYear W19984684292014 @default.
- W1998468429 countsByYear W19984684292015 @default.
- W1998468429 crossrefType "journal-article" @default.
- W1998468429 hasAuthorship W1998468429A5023624056 @default.
- W1998468429 hasAuthorship W1998468429A5031220773 @default.
- W1998468429 hasAuthorship W1998468429A5048821191 @default.
- W1998468429 hasAuthorship W1998468429A5050498301 @default.
- W1998468429 hasAuthorship W1998468429A5089561878 @default.
- W1998468429 hasConcept C113196181 @default.
- W1998468429 hasConcept C121332964 @default.
- W1998468429 hasConcept C159985019 @default.
- W1998468429 hasConcept C171250308 @default.
- W1998468429 hasConcept C178790620 @default.
- W1998468429 hasConcept C185544564 @default.
- W1998468429 hasConcept C185592680 @default.
- W1998468429 hasConcept C19067145 @default.
- W1998468429 hasConcept C191897082 @default.
- W1998468429 hasConcept C192562407 @default.
- W1998468429 hasConcept C194760766 @default.
- W1998468429 hasConcept C25442681 @default.
- W1998468429 hasConcept C26771246 @default.
- W1998468429 hasConcept C2778112282 @default.
- W1998468429 hasConcept C2778836790 @default.
- W1998468429 hasConcept C2779227376 @default.
- W1998468429 hasConcept C2780547777 @default.
- W1998468429 hasConcept C43617362 @default.
- W1998468429 hasConcept C514619126 @default.
- W1998468429 hasConcept C57410435 @default.
- W1998468429 hasConcept C61048295 @default.
- W1998468429 hasConceptScore W1998468429C113196181 @default.
- W1998468429 hasConceptScore W1998468429C121332964 @default.
- W1998468429 hasConceptScore W1998468429C159985019 @default.
- W1998468429 hasConceptScore W1998468429C171250308 @default.
- W1998468429 hasConceptScore W1998468429C178790620 @default.
- W1998468429 hasConceptScore W1998468429C185544564 @default.
- W1998468429 hasConceptScore W1998468429C185592680 @default.
- W1998468429 hasConceptScore W1998468429C19067145 @default.
- W1998468429 hasConceptScore W1998468429C191897082 @default.
- W1998468429 hasConceptScore W1998468429C192562407 @default.
- W1998468429 hasConceptScore W1998468429C194760766 @default.
- W1998468429 hasConceptScore W1998468429C25442681 @default.
- W1998468429 hasConceptScore W1998468429C26771246 @default.
- W1998468429 hasConceptScore W1998468429C2778112282 @default.
- W1998468429 hasConceptScore W1998468429C2778836790 @default.
- W1998468429 hasConceptScore W1998468429C2779227376 @default.
- W1998468429 hasConceptScore W1998468429C2780547777 @default.
- W1998468429 hasConceptScore W1998468429C43617362 @default.
- W1998468429 hasConceptScore W1998468429C514619126 @default.
- W1998468429 hasConceptScore W1998468429C57410435 @default.
- W1998468429 hasConceptScore W1998468429C61048295 @default.
- W1998468429 hasIssue "1" @default.
- W1998468429 hasLocation W19984684291 @default.
- W1998468429 hasOpenAccess W1998468429 @default.
- W1998468429 hasPrimaryLocation W19984684291 @default.
- W1998468429 hasRelatedWork W1933256704 @default.
- W1998468429 hasRelatedWork W1972497710 @default.
- W1998468429 hasRelatedWork W1986407598 @default.
- W1998468429 hasRelatedWork W1987689269 @default.
- W1998468429 hasRelatedWork W2015919147 @default.
- W1998468429 hasRelatedWork W2051926442 @default.
- W1998468429 hasRelatedWork W2079892311 @default.
- W1998468429 hasRelatedWork W2088392833 @default.
- W1998468429 hasRelatedWork W3049629210 @default.
- W1998468429 hasRelatedWork W2174123895 @default.
- W1998468429 hasVolume "17" @default.
- W1998468429 isParatext "false" @default.
- W1998468429 isRetracted "false" @default.
- W1998468429 magId "1998468429" @default.
- W1998468429 workType "article" @default.