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• W1998492091 abstract "Well-ordered clean InAs(1 1 1) A and B surfaces have been prepared using HCl–isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InClx. Annealing induces desorption of the overlayer and reveals (2 × 2) and (1 × 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. The major advantage of this preparation method over conventional thermal cleaning is a significant reduction in the annealing temperature (≈250 °C) thereby avoiding anion evaporation." @default.
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• W1998492091 date "2009-02-01" @default.
• W1998492091 modified "2023-09-25" @default.
• W1998492091 title "Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing" @default.
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• W1998492091 doi "https://doi.org/10.1016/j.susc.2008.12.014" @default.
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