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- W1998503438 abstract "The effects of negative differential resistance (NDR) have been clearly observed in 50-nm-gate InGaAs/InAlAs trench-type quantum-wire (QWR) field-effect transistors (FETs), which are fabricated by atomic hydrogen-assisted molecular-beam epitaxy. The NDR onset voltage is as low as 0.1 V, and the highest peak-to-valley current ratio is 6.2 at 40 K. The equilateral symmetry of the NDR effect in a QWR FET is also observed. The pronounced NDR effects in a trench-type QWR FET are advantageous for high-speed and low power-consumption devices." @default.
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- W1998503438 date "2003-07-22" @default.
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- W1998503438 title "Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length" @default.
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- W1998503438 doi "https://doi.org/10.1063/1.1595150" @default.
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