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• W1998503528 abstract "Nitrogen-doped ZnO thin films have been prepared by reactive ion beam sputtering deposition utilizing a capillaritron ion source. X-ray diffraction (XRD) analysis of the as-deposited film exhibits a single strong ZnO (002) diffraction peak centred at 34.40°. Post-growth annealing causes increase of grain size and decrease of c-axis lattice constant. Micro-Raman spectroscopy analysis of the as-deposited film shows strong nitrogen-related local vibration mode at 275, 582, 640 and 720 cm−1, whereas the E2 mode of ZnO at 436 cm−1 can barely be identified. Annealing at 500–800 °C causes decrease of 275, 582, 640 and 720 cm−1 and increase of 436 cm−1 intensity, indicating out-diffusion of nitrogen and improvement of ZnO crystalline quality. Unlike un-doped ZnO, the surface roughness of nitrogen-doped ZnO deteriorates after annealing, which is also attributed to the out-diffusion of nitrogen. A nitrogen concentration of ∼1021/cm3 was observed while type conversion from n-type to p-type was not achieved, which is likely due to the formation of ZnI–NO or (N2)O that act as donor/double donors." @default.
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• W1998503528 date "2010-04-01" @default.
• W1998503528 modified "2023-09-27" @default.
• W1998503528 title "Nitrogen-doped ZnO prepared by capillaritron reactive ion beam sputtering deposition" @default.
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• W1998503528 doi "https://doi.org/10.1016/j.apsusc.2010.02.001" @default.
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