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• W1998545162 abstract "We report first-principles results on the electronic structure of various silicene structures. For planar and simply buckled silicenes, we confirm their zero-gap nature and show a significant renormalization of their Fermi velocity by including many-electron effects. However, the other two recently proposed silicene structures exhibit a finite band gap, indicating that they are gapped semiconductors instead of previously expected Dirac-fermion semimetals. Moreover, our calculated quasiparticle gap quantitatively explains the recent angle-resolved photoemission spectroscopy measurements. In particular, the band gap of the latter two structures can be tuned in a wide range by applying strain, giving hope to bipolar-devices applications." @default.
• W1998545162 created "2016-06-24" @default.
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• W1998545162 date "2013-04-01" @default.
• W1998545162 modified "2023-10-02" @default.
• W1998545162 title "Electronic structure and quasiparticle bandgap of silicene structures" @default.
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• W1998545162 doi "https://doi.org/10.1063/1.4801309" @default.
• W1998545162 hasPublicationYear "2013" @default.
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