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- W1998564909 abstract "On–off switching behaviors or two-level random telegraph signals (RTS) are measured in the low voltage (−1.40 V<VG<−0.88 V) edge direct tunneling currents in ultrathin gate stack (10 Å oxide+10 Å nitride) n-channel metal-oxide-semiconductor field-effect transistors. The plausible origin is the process-induced defects in terms of localized gate stack thinning (or equivalently the conductive filament). In such extrinsic case, the current trapping–detrapping theories can adequately elucidate the data, particularly the RTS magnitude as large as 18%. The current–voltage characteristic associated with a certain defective spot is assessed straightforwardly, showing remarkable compatibility with existing oxide thinning case. Systematic measurements of RTS in the terminal currents allow for determining the occurrence probability as well as locations of defects, and may be treated as a sensitive process monitor." @default.
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- W1998564909 date "2002-10-22" @default.
- W1998564909 modified "2023-10-18" @default.
- W1998564909 title "On–off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors" @default.
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- W1998564909 doi "https://doi.org/10.1063/1.1518563" @default.
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