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- W1998678883 abstract "The electrochemical behavior of freshly etched (111)B-oriented InP surfaces was compared to that of (111)B-oriented InP surfaces that had been chemically modified by reaction with p-BrCH2C6H4CF3. Differential capacitance versus potential and current density versus potential techniques were used to measure the energetics and kinetics of interfacial electron-transfer reactions in contact with a 70:30 (v:v) mixture of CH3CN−tetrahydrofuran that contained either 1,1‘-dimethylferrrocene+/0 or decamethylferrocene+/0. For both the etched and modified (111)B InP contacts, plots of differential capacitance versus potential measurements indicated a linear dependence of the equilibrium voltage drop (Vbi) in the semiconductor space-charge region, as a function of the redox potential (E(A/A-)) of the solution, with the slope of Vbi vs E(A/A-) ≈ 1.0, as expected for ideal behavior of a semiconductor/liquid junction. The barrier heights calculated for the chemically modified InP/liquid junctions were 100 ± 20 mV higher ..." @default.
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- W1998678883 date "2004-03-16" @default.
- W1998678883 modified "2023-09-26" @default.
- W1998678883 title "Energetics and Kinetics of Interfacial Electron-Transfer Processes at Chemically Modified InP/Liquid Junctions" @default.
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- W1998678883 doi "https://doi.org/10.1021/jp0223049" @default.
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