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• W1998760812 abstract "Solution-processed In(2)O(3) thin-film transistors (TFTs) were fabricated by a spin-coating process using a metal halide precursor, InCl(3), dissolved in acetonitrile. A thin and uniform film can be controlled and formed by adding ethylene glycol. The synthesized In(2)O(3) thin films were annealed at various temperatures ranging from 200 to 600 °C in air or in an O(2)/O(3) atmospheric environment. The TFTs annealed at 500 °C under air exhibited a high field-effect mobility of 55.26 cm(2) V(-1) s(-1) and an I(on)/I(off) current ratio of 10(7). In(2)O(3) TFTs annealed under an O(2)/O(3) atmosphere at temperatures from 200 to 300 °C exhibited excellent n-type transistor behaviors with field-effect mobilities of 0.85-22.14 cm(2) V(-1) s(-1) and I(on)/I(off) ratios of 10(5)-10(6). The annealing atmosphere of O(2)/O(3) elevates solution-processed In(2)O(3) TFTs to higher performance at lower processing temperature." @default.
• W1998760812 created "2016-06-24" @default.
• W1998760812 creator A5027979872 @default.
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• W1998760812 date "2011-03-18" @default.
• W1998760812 modified "2023-09-30" @default.
• W1998760812 title "Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film Transistors" @default.
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• W1998760812 doi "https://doi.org/10.1021/ja104864j" @default.
• W1998760812 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/21417268" @default.
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