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- W1998866340 abstract "In this work, a photodiode for the visible spectral range, which will be integrated monolithically with CMOS circuits, ispresented. Such Optoelectronic Integrated Circuit (OEIC) with high sensitivity in the 400-900 nm spectral range isutilized to realize electronic processing from the light beam position that hit a specific area of the photodetector. Theoutput signals with voltages of 0V and 3 V can be implemented with a controller circuit. By the Using of He-Ne Laserat 633 nm as incident light, the responsivity of the Position Sense Photodetector (PSPD) was 0.35 A/W and the rise andfall time of less than 30 ns were achieved. These parameters were necessaries to achieve the photodiode integration in anindustrial 0.5 μm CMOS process, only additional mask was needed in order to block out the threshold voltageimplantation in the photo-active region. Therefore both designs of photodiode and the electronic processing circuitseparately, are shown here, all design will be integrated monolithically in the same Silicon chip." @default.
- W1998866340 created "2016-06-24" @default.
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- W1998866340 date "2009-08-20" @default.
- W1998866340 modified "2023-10-17" @default.
- W1998866340 title "Quadrant photodiode for electronic processing" @default.
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- W1998866340 doi "https://doi.org/10.1117/12.825520" @default.
- W1998866340 hasPublicationYear "2009" @default.
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