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• W1998878791 abstract "It is demonstrated that the gate interface breaks the equivalence between vertical and transverse direction for the mobility in 〈100〉/(001) pMOSFETs, leading to 6 instead of 3 independent 1st order piezoconductance coefficients. This is found from Monte Carlo (MC) simulations yielding different effective mobilities for uniaxial vertical and transverse stress, which can be explained in terms of energy and parallel-momentum conservation upon specular surface scattering. A mobility model with stress-dependent 1st order piezoconductance coefficients is presented. This model is shown to reproduce well corresponding MC effective mobilities not only for low, but also for high stress." @default.
• W1998878791 created "2016-06-24" @default.
• W1998878791 creator A5054624881 @default.
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• W1998878791 date "2010-09-01" @default.
• W1998878791 modified "2023-10-16" @default.
• W1998878791 title "Symmetry reduction by surface scattering and mobility model for stressed &#x2329;100&#x232A;/(001) MOSFETs" @default.
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• W1998878791 doi "https://doi.org/10.1109/sispad.2010.5604508" @default.
• W1998878791 hasPublicationYear "2010" @default.
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