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• W1998955295 abstract "In this work, we have investigated the diffusion barrier performance of Mo and MoxN films deposited by direct current sputtering between the Cu and Si substrates. θ–2θ X-ray diffraction patterns showed the temperature of the Cu3Si phase formed in three different structures. The results of scanning electron microscopy indicated the morphological evolution of the sample surfaces after annealing at different temperatures. Four-probe measurements showed that the MoxN barrier was better at maintaining the good electrical performance of the Cu metallization system than the Mo barrier." @default.
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• W1998955295 date "2004-03-01" @default.
• W1998955295 modified "2023-10-18" @default.
• W1998955295 title "Diffusion barrier performances of direct current sputter-deposited Mo and MoxN films between Cu and Si" @default.
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• W1998955295 doi "https://doi.org/10.1016/j.jcrysgro.2003.11.005" @default.
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