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- W1999128518 abstract "Abstract Atomic processes and structural configurations during thin film growth of silicon are studied by performing parallel replica molecular dynamics simulations. These simulations reveal that complex many-atom moves can occur at large deposition rates during silicon thin-film growth, which can affect the long-time evolution of the film. The types of atomic moves change as thickness of film varies from 0-2.3 ML. Single-atom moves are common at low Si coverage. However, surprisingly fast many- atom moves are observed at higher film thicknesses when amorphous thin-films are formed. Implications from this study on the observations that can be made with standard materials modelling approach such as molecular dynamics and kinetic Monte Carlo simulations are discussed." @default.
- W1999128518 created "2016-06-24" @default.
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- W1999128518 date "2014-01-01" @default.
- W1999128518 modified "2023-10-17" @default.
- W1999128518 title "Study of Silicon Thin Film Growth at High Deposition Rates Using Parallel Replica Molecular Dynamics Simulations" @default.
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- W1999128518 doi "https://doi.org/10.1016/j.egypro.2014.07.270" @default.
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