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• W1999156493 abstract "Epitaxial GeMnN${}_{2}$ thin films are synthesized by plasma-assisted molecular beam epitaxy. Transmission electron microscopy and x-ray diffraction measurements confirm that it is the orthorhombic variant, consistent with the predictions of first-principles calculations. The magnetic properties of the films are related to defects, with samples grown under Ge-rich conditions exhibiting a net magnetic moment above room temperature. These results are explained by first-principles calculations, indicating that the preferential substitution of one magnetic sublattice of GeMnN${}_{2}$ by impurities and/or intrinsic defects such as Ge antisites produces a net magnetic moment in an antiferromagnetic background, and also introduces spin-polarized carriers near the Fermi level." @default.
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• W1999156493 date "2012-04-23" @default.
• W1999156493 modified "2023-09-26" @default.
• W1999156493 title "Structural and magnetic properties of MBE-grown GeMnN<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>thin films" @default.
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• W1999156493 doi "https://doi.org/10.1103/physrevb.85.144113" @default.
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