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- W1999178380 abstract "N-type modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures grown by molecular beam epitaxy on InP substrate have been characterised by double-crystal X-ray diffraction and X-ray topography, temperature-dependent Hall measurements, and photoluminescence and absorption spectroscopy. Both the constituent GaxIn1-xAs (x=0.453) and the AlyIn1-yAs (y=0.421) layers are strained. X-ray Pendellosung fringes from the GaxIn1-xAs as well as the AlyIn1-yAs epilayers are observed, indicating an almost perfect interface smoothness and homogeneity of the layer composition. Despite the highly strained AlyIn1-yAs the electron mobility reaches 9.0*103, 6.5*104, and 8.9*104 cm2 V-1 s-1 at 300, 77 and 4 K, respectively, thus indicating only a minor influence of the strain of the AlyIn1-yAs upon the 2D electron mobility. In photoluminescence the excellent material quality manifests itself in the narrow bound exciton peak from the GaxIn1-xAs layer and in the absence of any transition related to the 2D electrons and holes trapped near the heterointerface." @default.
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- W1999178380 title "High electron mobility in modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy" @default.
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- W1999178380 doi "https://doi.org/10.1088/0268-1242/5/6/023" @default.
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