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- W1999191506 abstract "The thermal evaporation of a GaS single crystal has been used for the first time to passivate the GaAs surface. The interface formation in the initial stage of the growth of GaS on a GaAs(111)A surface has been studied by low-energy electron-loss spectroscopy (LEELS), X-ray photoemission spectroscopy (XPS), and atomic force microscopy (AFM) as a function of deposition temperature. Photoluminescence (PL) measurements of GaAs(111)A with and without GaS thin films have also been carried out at low temperature (5.5 K) as a function of aging time in the atmosphere. The LEELS spectra shows that the surface-related peaks of GaAs disappeared immediately after starting the deposition, suggesting the effective passivation of dangling bonds of the GaAs surface by S atoms included in the evaporated species. The LEELS spectrum of the films grown at 350 and 400°C resembles that of a GaS single crystal, whereas that of the films grown at 450°C and annealed at 500°C reveals that the GaAs surface was terminated by only an S layer. LEELS and XPS spectra suggest that the crystal quality of GaS films grown at 350 and 400°C is improved by post-annealing at 450°C. The band discontinuity between GaS and GaAs is estimated by XPS, and the results demonstrate a staggered-type band alignment. Surface morphology of the films studied by AFM reveals the layer-by-layer initial growth of GaS. PL measurements suggest that the GaAs(111)A surface is effectively passivated by a GaS films." @default.
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- W1999191506 date "1998-10-01" @default.
- W1999191506 modified "2023-09-26" @default.
- W1999191506 title "Interface formation between layered-compound GaS and GaAs(111)A surface" @default.
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- W1999191506 doi "https://doi.org/10.1016/s0039-6028(98)00615-3" @default.
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