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- W1999195111 abstract "Abstract The GaN layers were grown by compound-source molecular beam epitaxy (CS-MBE) on (1 1 1) aluminum (Al) substrates with and without nitridation. The melting point of Al substrates limits the growth temperature. The layers were grown at 650 °C. Reflection high-energy electron diffraction (RHEED) patterns of the layers indicate that the nitridation is effective for GaN growth by CS-MBE on aluminum substrates. Photoluminescence was observed from the layer grown on the Al substrate with nitridation at RT." @default.
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- W1999195111 date "2009-03-01" @default.
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- W1999195111 title "Nitridation of (1 1 1)Al substrates for GaN growth by molecular beam epitaxy" @default.
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- W1999195111 doi "https://doi.org/10.1016/j.jcrysgro.2008.11.007" @default.
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