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• W1999207849 abstract "Epitaxial films of Zinc telluride are deposited by rf sputtering on the clean surface of GaAs(100), InP(100) and GaSb(100) substrates, which have lattice mismatches with ZnTe of 7.6, 3.8 and 0.1%, respectively. Ion-channeling measurements are carried out to evaluate the crystalline quality of the ZnTe films. The defect density in the films greatly depends on the lattice mismatch between ZnTe and the substrates. The epitaxial films with thicknesses of 130 to 150 nm on GaAs, InP and GaSb give minimum aligned yields X min of 32, 18 and 8%, respectively. The value of X min of the film on GaSb is fairly small, comparable to the value for the single crystal. The dependences of the dechanneling probability on the incident-beam energy indicate the presence of dislocation lines." @default.
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• W1999207849 date "1990-06-01" @default.
• W1999207849 modified "2023-10-17" @default.
• W1999207849 title "Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling" @default.
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• W1999207849 doi "https://doi.org/10.1143/jjap.29.1039" @default.
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