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- W1999316295 abstract "Abstract We have investigated the epitaxial growth of (1 1 1)ZrN films on (1 1 1)Si substrate at a relatively low temperature using an ultrahigh vacuum DC magnetron sputtering system. The film quality obtained and the epitaxial relationship were evaluated on the basis of analyses of X-ray diffraction (XRD) patterns, X-ray pole figures, and grazing incidence angle X-ray reflectivity (GIXR), transmission electron microscopy (TEM) and atomic force microscopy (AFM) results. It was found that (1 1 1)ZrN films were grown epitaxially on (1 1 1)Si at a substrate temperature of 500 ∘ C with the directional relationship ZrN(1 1 1)[1 1 0] ∥ Si(1 1 1)[1 1 0]. GIXR and AFM results also revealed that the epitaxial (1 1 1)ZrN film has a high film density comparable to that of bulk ZrN and a fairly flat surface morphology with an average surface roughness of approximately 0.25 nm." @default.
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- W1999316295 date "2006-12-01" @default.
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- W1999316295 title "Epitaxial growth of (111)ZrN thin films on (111)Si substrate by reactive sputtering and their surface morphologies" @default.
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- W1999316295 doi "https://doi.org/10.1016/j.jcrysgro.2006.09.013" @default.
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