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- W1999348567 abstract "Heteroepitaxial Ge on Si has been grown using molecular beam epitaxy at a Si substrate temperature of 900 °C. Electron microscopy results reveal a highly faceted interface, indicating localized Ge melting and subsequent local alloying with Si. Furthermore, this phenomenon is associated with extensive threading dislocation confinement near the Ge/Si interface. Etch pit density measurements obtained on Ge heteroepitaxial films that have undergone interfacial melting are as low as 105 cm−2." @default.
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- W1999348567 date "1992-02-17" @default.
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- W1999348567 title "Low-defect-density germanium on silicon obtained by a novel growth phenomenon" @default.
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- W1999348567 doi "https://doi.org/10.1063/1.106532" @default.
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