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- W1999363097 abstract "The microstructure, crystallization behavior and electrical resistivity of different Fe-M-O (M=Hf,Zr) films prepared by the rf magnetron sputtering technique were investigated. In the as-deposited state, the structures of Fe-M-O films with a solute content of 13 to 22.7 at% Hf and 15 to 38 at% O, or of 5 to 13 at% Zr and 8 to 30 at% O, were found to consist of a bec phase with grain diameters below 10 nm and an amorphous phase containing larger amounts of M and O. The film crystallizes in two stages, corresponding to the precipitation and grain growth of the bec phase and of oxides, respectively. The amorphous phase region expanded with increasing M content, and the electrical resistivity rapidly increased, reaching 1860 μΩm for an Fe<sub46.2</sub>Hf<sub>18.2</sub>O<sub>35.6</sub> film with a structure composed of a large amorphous phase region and a small bec phase region." @default.
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- W1999363097 date "1994-11-01" @default.
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- W1999363097 title "Microstructure and Crystallization Behavior of Fe-M-O (M=Hf, Zr) Films with High Resistivity" @default.
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- W1999363097 doi "https://doi.org/10.1109/tjmj.1994.4565993" @default.
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