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- W1999402471 abstract "A novel in situ POCl <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> -doped interlevel (IPI) method is described, in which the oxide grown during POCl <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> predeposition is used as the interlevel oxide. This scheme is contrary to the conventional process flow with the stripping of the oxide (phosphorus-doped silicon glass (PSG) grown during POCl <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> predeposition before the real interlevel oxide is grown. The new in situ POCl <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> -doped interlevel Oxidation scheme results in a simplified process flow. It is shown that good-quality interlevel oxide can be obtained by properly incorporating the POCl <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> predeposition into the interlevel oxidation cycle. A 38-nm oxide with a tight breakdown distribution around 24 V and leakage of 5.E-9 Amp/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> at 12 V is demonstrated." @default.
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- W1999402471 date "1985-07-01" @default.
- W1999402471 modified "2023-10-18" @default.
- W1999402471 title "In situ POCl3-doped interlevel oxidation" @default.
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- W1999402471 doi "https://doi.org/10.1109/t-ed.1985.22125" @default.
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