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• W1999461617 abstract "The annealing effects of sapphire substrate on the quality of epitaxial ZnO films grown by metalorganic chemical vapor deposition (MOCVD) were studied. The atomic steps formed on (0 0 0 1) sapphire (α-Al2O3) substrate surface by annealing at high temperature was analyzed by atomic force microscopy (AFM). The annealing effects of sapphire substrate on the ZnO films were examined by X-ray diffraction (XRD), AFM and photoluminescence (PL) measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates is given." @default.
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• W1999461617 date "2006-12-01" @default.
• W1999461617 modified "2023-10-14" @default.
• W1999461617 title "Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD" @default.
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• W1999461617 doi "https://doi.org/10.1016/j.apsusc.2006.03.020" @default.
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