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- W1999461671 abstract "Abstract Etching experiments on Te-rich Se x T 1− x single crystals grown by the Czochralski method have been carried out. It was found that the etch pit density (EPD) increased when the Se concentration in the melt was increased. The EPD was also found to increase with the crystal growth rate. Etch pit density in a crystal grown from the melt containing 30 at% Se was found to be ≈10 5 /cm 2 ." @default.
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- W1999461671 date "1984-11-01" @default.
- W1999461671 modified "2023-09-27" @default.
- W1999461671 title "Etching studies on Czochralski grown Te-rich SexTe1−x crystals" @default.
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- W1999461671 doi "https://doi.org/10.1016/0167-577x(84)90015-6" @default.
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