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- W1999539444 abstract "Communication: The integration of high Tc superconductors with silicon requires buffer layers, which can act as diffusion barriers. One suitable material is LaAlO3 and this paper reports on a simple, low cost technique for preparating buffer layers on Si(100) substrates by MOCVD with new lanthanum and aluminum precursors. This effects of deposition temperature with either a one-step or two-step process are investigated. Both methods produce polycrystalline, shiny thin films with good adhesion properties." @default.
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- W1999539444 date "1997-11-01" @default.
- W1999539444 modified "2023-10-15" @default.
- W1999539444 title "Fabrication of polycrystalline LaAlO<sub>3</sub>films on Si(100): An MOCVD application of the second-generation La(hfa)<sub>3</sub>· diglyme precursor" @default.
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- W1999539444 doi "https://doi.org/10.1002/cvde.19970030604" @default.
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