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• W1999557809 abstract "Si nanocrystals (NCs) embedded in an SiC matrix were prepared by the deposition of Si-rich Si1−xCx/SiC nanomultilayer films using magnetron sputtering, subsequently followed by thermal annealing in the range of 800∼1200 °C. As the annealing temperature increases to 1000 °C, Si NCs begin to form and SiC NCs also start to emerge at the annealing temperature of 1200 °C. With the increase of annealing temperature, two photoluminescence (PL) peaks have an obvious redshift. The intensity of the low-energy PL peak around 669∼742 nm gradually lowers, however the intensity of high-energy PL peak around 601∼632 nm enhances. The low-energy PL peak might attribute to dangling bonds in amorphous Si (a-Si) sublayers, and the redshift of this peak might be related to the passivation of Si dangling bonds. Whereas the origin of the high-energy PL peak may be the emergence of Si NCs, the redshift of this peak correlates with the change in the size of Si NCs." @default.
• W1999557809 created "2016-06-24" @default.
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• W1999557809 creator A5075833706 @default.
• W1999557809 date "2010-05-01" @default.
• W1999557809 modified "2023-09-24" @default.
• W1999557809 title "Structural and photoluminescence properties of silicon nanocrystals embedded in SiC matrix prepared by magnetron sputtering" @default.
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• W1999557809 doi "https://doi.org/10.1016/j.ssc.2010.02.032" @default.
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