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• W1999617154 abstract "We fabricated the binary high- nanocrystal memory using a very simple sol-gel spin coating method and 900°C rapid thermal annealing (RTA). From the transmission electron microscopy identification, the nanocrystals were formed as the monolayered charge trapping site after 900°C RTA and the size was ca. . We verified the electrical properties in terms of program-erase speed, charge retention, and endurance. The sol-gel device exhibited the long charge retention time of with only 2.5% charge loss, and good endurance performance for program/erase cycles up to ." @default.
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• W1999617154 date "2007-01-01" @default.
• W1999617154 modified "2023-10-17" @default.
• W1999617154 title "Fabrication of SONOS-Type Flash Memory with the Binary High-k Dielectrics by the Sol-Gel Spin Coating Method" @default.
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• W1999617154 doi "https://doi.org/10.1149/1.2433705" @default.
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