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- W1999637008 abstract "The practical importance of studying mechanical properties and dislocation structure of HgI2 is reviewed briefly. Specifically, the performance of single crystal HgI2 radiation detectors is evidently sensitive to crystalline imperfections, including dislocations. The dislocation structure, in turn, may be altered during crystal growth and detector fabrication; the nature of such alterations depends upon the mechanical properties of the crystal and the stresses to which the crystal is subjected. This work examines the influence of temperature upon dislocation mobility and plasticity in vapor grown single crystals of mercuric iodide. Dislocation mobility is determined by measuring the lengths of the longest arms of dislocation etch pit rosettes on (001) surfaces following microhardness indentation and chemical etch. Measurements were made at temperatures ranging from room temperature to the phase transition temperature of 127°C. Dislocation mobility was found to increase with temperature, with the effect accelerating as the 127°C phase transition is approached. Increasing temperature was also found to lower the critical resolved shear stress for plastic deformation or slip on (001) planes. In these contexts, the vapor grown crystals are clearly “softer” at their elevated growth temperatures. The results are discussed in terms of a dislocation model involving “soft” and “hard” glide dislocations." @default.
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- W1999637008 date "1983-07-01" @default.
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- W1999637008 title "Influence of temperature upon dislocation mobility and elastic limit of single crystal HgI2" @default.
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- W1999637008 doi "https://doi.org/10.1016/0167-5087(83)90043-1" @default.
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