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• W1999734371 endingPage "881" @default.
• W1999734371 startingPage "877" @default.
• W1999734371 abstract "Semiconductor optoelectronic devices based on GaN and on InGaN or AlGaN alloys and superlattices can operate in a wide range of wavelengths, from far infrared to near ultraviolet region. The efficiency of these devices could be enhanced by shrinking the size and increasing the density of the semiconductor components. Nanostructured materials are natural candidates to fulfill these requirements. Here we use the density functional theory to study the electronic and structural properties of (10,0) GaN, AlN, AlxGa1 − xN nanotubes and GaN/AlxGa1 − xN heterojunctions, 0<x<1. The AlxGa1 − xN nanotubes exhibit direct band gaps for the whole range of Al compositions, with band gaps varying from 3.45 to 4.85 eV, and a negative band gap bowing coefficient of −0.14 eV. The GaN/AlxGa1 − xN nanotube heterojunctions show a type-I band alignment, with the valence band offsets showing a non-linear dependence with the Al content in the nanotube alloy. The results show the possibility of engineering the band gaps and band offsets of these III-nitrides nanotubes by alloying on the cation sites." @default.
• W1999734371 created "2016-06-24" @default.
• W1999734371 creator A5004950718 @default.
• W1999734371 creator A5036812068 @default.
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• W1999734371 date "2010-01-01" @default.
• W1999734371 modified "2023-09-26" @default.
• W1999734371 title "AlN, GaN, Al Ga1−N nanotubes and GaN/Al Ga1−N nanotube heterojunctions" @default.
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• W1999734371 doi "https://doi.org/10.1016/j.physleta.2009.11.084" @default.
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