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- W1999741543 abstract "A depletion-mode field-effect transistor is used to determine the electrical characteristics of a silicon-on-insulator (SOI) structure such as the Si film doping, the fixed oxide charges, and the interface trapped charges at the Si/SiO2 interfaces. We consider the case of a very thin Si film, i.e., the Si film thickness is smaller than the maximum depletion layer width. The electrical parameters of the SOI structure are derived from drain-source current versus gate voltage and transconductance characteristics, provided that the back Si surface is accumulated by a proper substrate biasing. The device can be of small dimensions and can be used in process control without any extra process step." @default.
- W1999741543 created "2016-06-24" @default.
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- W1999741543 date "1988-01-04" @default.
- W1999741543 modified "2023-09-26" @default.
- W1999741543 title "Characterization of beam‐recrystallized Si films and their Si/SiO<sub>2</sub>interfaces in silicon‐on‐insulator structures: The very thin Si film case" @default.
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- W1999741543 doi "https://doi.org/10.1063/1.99312" @default.
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