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- W1999751552 abstract "The strain response of high mobility Ge nFETs, low EOT (∼1 nm) ZrO 2 Ge nFETs, and triangular Ge pFinFETs are reported. The strain response of (111) substrates is smaller than (001) substrates under tensile strain along channel direction. Low EOT gate-last Ge nFETs using ZrO 2 gate dielectric with nearly no interfacial layer is demonstrated with the superior electrical performance. Moreover, the triangular Ge GAA pFinFET with fin width (W fin ) of 52nm and L g of 183nm has I on /I off = 105, SS= 130mV/dec, and I on =235 A/m at −1 V. T he dislocated Ge near Ge/Si interface on SOI was etched and formed nearly defect-free channels." @default.
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- W1999751552 date "2012-10-01" @default.
- W1999751552 modified "2023-09-23" @default.
- W1999751552 title "Planar and 3D Ge FETs" @default.
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- W1999751552 doi "https://doi.org/10.1109/icsict.2012.6467609" @default.
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