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- W1999858218 abstract "Triple-crystal x-ray diffractometry and x-ray reflectometry have been used to determine defects in epi-ready wafers caused by mechanical treatment. Reciprocal space maps around the 400 lattice point were separately made for mechanically polished wafers before and after etching treatment. The lattice imperfections have been studied by measuring the diffusion scattering. The surface morphology has been controlled by means of x-ray reflectometry. It was shown that measurements of diffuse scattering could be made with good sensitivity in a reasonable time when there was a moderate difference between the d spacing of the sample and the monochromator." @default.
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- W1999858218 date "1998-07-13" @default.
- W1999858218 modified "2023-10-06" @default.
- W1999858218 title "X-ray high-resolution diffraction and reflectivity studies of defects related to the mechanical treatment of single crystals" @default.
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- W1999858218 doi "https://doi.org/10.1088/0953-8984/10/27/007" @default.
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