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- W1999858960 abstract "In this study, a remarkable improvement in heat-dissipation performance due to the high thermal conductivity of SiC was demonstrated for Si MOSFETs fabricated on directly bonded Si-on-SiC wafers. Si devices on Si-on-SiC wafers are expected to operate at higher power densities or in higher temperature atmospheres than conventional Si devices. When used with semi-insulating SiC, the proposed Si-on-SiC is applicable to conventional silicon-on-insulator (SOI) structures for reducing the parasitic capacitance of the wafer, which results in the possibility of extremely high operating frequencies with low power loss." @default.
- W1999858960 created "2016-06-24" @default.
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- W1999858960 date "2009-06-01" @default.
- W1999858960 modified "2023-09-26" @default.
- W1999858960 title "Reduction of self-heating effect in silicon MOSFETs on directly bonded Si-on-SiC wafer with high heat conductance" @default.
- W1999858960 doi "https://doi.org/10.1109/drc.2009.5354925" @default.
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