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- W1999898501 abstract "An electron spin resonance (ESR) study has been carried out of point defects generated in standard thermal ${mathrm{SiO}}_{2}$ on (100) Si during vacuum annealing in the temperature range ${T}_{mathrm{an}}=950--1250ifmmode^circelsetextdegreefi{}mathrm{C},$ including the predominant exclusive S center in addition to the familiar ${E}_{ensuremath{gamma}}^{ensuremath{'}},$ ${E}_{ensuremath{delta}}^{ensuremath{'}},$ and EX defects. The latter only appear after 10-eV optical excitation. The S and ${E}_{ensuremath{gamma}}^{ensuremath{'}}$ density is found to increase monotonically with ${T}_{mathrm{an}},$ while EX and ${E}_{ensuremath{delta}}^{ensuremath{'}}$ detectivity fades for ${T}_{mathrm{an}}>~1050$ and 1200 ifmmode^circelsetextdegreefi{}C, respectively. Over broad ${T}_{mathrm{an}}$ ranges, the generation of all three defects S, ${E}_{ensuremath{gamma}}^{ensuremath{'}},$ and ${E}_{ensuremath{delta}}^{ensuremath{'}}$ appears thermally activated (Arrhenius type) with a common activation energy ${E}_{a}ensuremath{approx}1.6mathrm{eV}.$ Large defect densities may be reached, i.e., [S] up to $ensuremath{sim}1ifmmodetimeselsetexttimesfi{}{10}^{15}{mathrm{cm}}^{mathrm{ensuremath{-}}2}$ for ${T}_{mathrm{an}}=1250ifmmode^circelsetextdegreefi{}mathrm{C},$ typically one order of magnitude larger than $[{E}_{ensuremath{gamma}}^{ensuremath{'}}].$ With a view to identification, the S-center ESR characteristics have been mapped in detail. Its susceptibility is found nearly paramagnetic---Curie-Weiss type with critical temperature ${T}_{c}=1.3ifmmodepmelsetextpmfi{}0.4mathrm{K},$ indicative of a weak ferromagnetic coupling; the defects appear clustered. Oxide etch-back experiments reveal that during degradation the oxide undergoes significant modification, dependent on depth into the oxide film. As to defect distribution, for ${T}_{mathrm{an}}=1200ifmmode^circelsetextdegreefi{}mathrm{C},$ the etch-back experiments show the S centers to predominantly occur near the oxide borders, with a sharp pileup within ensuremath{sim}40 AA{} of the ${mathrm{S}mathrm{i}/mathrm{S}mathrm{i}mathrm{O}}_{2}$ interface, and a more stretched out one (ensuremath{sim}150 AA{}) towards the top surface; S and ${E}_{ensuremath{gamma}}^{ensuremath{'}}$ centers generally occur in anticorrelation. The S defects are susceptible to passivation in molecular ${mathrm{H}}_{2}.$ From the salient ESR properties, the S center is suggested to be of the type ${mathrm{Si}}_{n}{mathrm{O}}_{3ensuremath{-}n}ensuremath{equiv}mathrm{Si}ensuremath{cdot} (n=1,2).$ Though tentative, the observed weak hyperfine structure may be compatible with either the single $n=1$ defect or an overlap of both the $n=1,$2 types, the defect system exhibiting substantial randomness-induced variation in defect morphology. Based on the known interfacial ${mathrm{SiO}}_{2}$ reduction process, the thermal degradation of the oxide as a whole is interpreted as effectuated by interface-released SiO." @default.
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- W1999898501 date "2002-07-15" @default.
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- W1999898501 title "Structural degradation of thermal<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>on Si by high-temperature annealing: Defect generation" @default.
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- W1999898501 doi "https://doi.org/10.1103/physrevb.66.045307" @default.
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