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- W2000018076 abstract "Abstract Semiconducting films of (n-type) ZnSe and (p-type) nitrogen-doped ZnSe were electrodeposited by a linear-sweep voltammetric technique on to a substrate of fluorine–tin oxide (FTO) glass ceramics. The films were characterized by scanning electron microscopy, energy-dispersive X-ray analysis and grazing-incidence X-ray diffraction. The results indicated that the material was deposited uniformly over the substrate, forming clusters when the Zn content of the bath was 0.1 mol L −1 and a film when it was 0.2 or 0.3 mol L −1 . The effectiveness of doping the films with nitrogen by adding ammonium sulfate to the deposition solution was assessed by measuring the film–electrolyte interface capacitance ( C ) at various applied potentials ( E ap ) and plotting Mott–Schottky curves ( C −2 vs E ap ), whose slope sign was used to identify p-type ZnSe." @default.
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- W2000018076 date "2010-05-01" @default.
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- W2000018076 title "Electrodeposition and characterization of undoped and nitrogen-doped ZnSe films" @default.
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- W2000018076 doi "https://doi.org/10.1016/j.matchemphys.2009.12.038" @default.
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