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- W2000034080 abstract "The design and performance of two high efficiency Ka-band power amplifier MMICs utilizing a 0.15μm GaN HEMT process technology is presented. Measured in-fixture continuous wave (CW) results for the 3-stage balanced amplifier demonstrates up to 11W of output power and 30% power added efficiency (PAE) at 30GHz. The 3-stage single-ended design produced over 6W of output power and up to 34% PAE. The die size for the balanced and single-ended MMICs are 3.24×3.60mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> and 1.74×3.24mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> respectively." @default.
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- W2000034080 date "2013-10-01" @default.
- W2000034080 modified "2023-10-12" @default.
- W2000034080 title "High efficiency Ka-band Gallium Nitride power amplifier MMICs" @default.
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- W2000034080 doi "https://doi.org/10.1109/comcas.2013.6685246" @default.
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