Matches in SemOpenAlex for { <https://semopenalex.org/work/W2000089043> ?p ?o ?g. }
- W2000089043 endingPage "5006" @default.
- W2000089043 startingPage "5000" @default.
- W2000089043 abstract "We report on the growth of p-type ZnO thin films with improved stability on various substrates and study the photoconductive property of the p-type ZnO films. The nitrogen doped ZnO (N:ZnO) thin films were grown on Si, quartz and alumina substrates by radio frequency magnetron sputtering followed by thermal annealing. Structural studies show that the N:ZnO films possess high crystallinity with c-axis orientation. The as-grown films possess higher lattice constants compared to the undoped films. Besides the high crystallinity, the Raman spectra show clear evidence of nitrogen incorporation in the doped ZnO lattice. A strong UV photoluminescence emission at ~ 380 nm is observed from all the N:ZnO thin films. Prior to post-deposition annealing, p-type conductivity was found to be unstable at room temperature. Post-growth annealing of N:ZnO film on Si substrate shows a relatively stable p-type ZnO with room temperature resistivity of 0.2 Ω cm, Hall mobility of 58 cm2/V s and hole concentration of 1.95 × 1017 cm− 3. A homo-junction p–n diode fabricated on the annealed p-type ZnO layer showed rectification behavior in the current–voltage characteristics demonstrating the p-type conduction of the doped layer. Doped ZnO films (annealed) show more than two orders of magnitude enhancement in the photoconductivity as compared to that of the undoped film. The transient photoconductivity measurement with UV light illumination on the doped ZnO film shows a slow photoresponse with bi-exponential growth and bi-exponential decay behaviors. Mechanism of improved photoconductivity and slow photoresponse is discussed based on high mobility of carriers and photodesorption of oxygen molecules in the N:ZnO film, respectively." @default.
- W2000089043 created "2016-06-24" @default.
- W2000089043 creator A5003213056 @default.
- W2000089043 creator A5069564761 @default.
- W2000089043 date "2012-05-01" @default.
- W2000089043 modified "2023-09-29" @default.
- W2000089043 title "Stable p-type conductivity and enhanced photoconductivity from nitrogen-doped annealed ZnO thin film" @default.
- W2000089043 cites W1676397036 @default.
- W2000089043 cites W1969682869 @default.
- W2000089043 cites W1973095348 @default.
- W2000089043 cites W1977407175 @default.
- W2000089043 cites W1982432114 @default.
- W2000089043 cites W1992425819 @default.
- W2000089043 cites W1992891646 @default.
- W2000089043 cites W1993097485 @default.
- W2000089043 cites W1996646207 @default.
- W2000089043 cites W2002093212 @default.
- W2000089043 cites W2002964825 @default.
- W2000089043 cites W2003843154 @default.
- W2000089043 cites W2007089339 @default.
- W2000089043 cites W2009213577 @default.
- W2000089043 cites W2009836610 @default.
- W2000089043 cites W2012801273 @default.
- W2000089043 cites W2016319112 @default.
- W2000089043 cites W2020741058 @default.
- W2000089043 cites W2025117053 @default.
- W2000089043 cites W2025260161 @default.
- W2000089043 cites W2029413399 @default.
- W2000089043 cites W2036600363 @default.
- W2000089043 cites W2046870563 @default.
- W2000089043 cites W2047820958 @default.
- W2000089043 cites W2048362658 @default.
- W2000089043 cites W2050897202 @default.
- W2000089043 cites W2052256718 @default.
- W2000089043 cites W2054568307 @default.
- W2000089043 cites W2056573889 @default.
- W2000089043 cites W2066676904 @default.
- W2000089043 cites W2066677295 @default.
- W2000089043 cites W2074917427 @default.
- W2000089043 cites W2082584982 @default.
- W2000089043 cites W2082631672 @default.
- W2000089043 cites W2084848033 @default.
- W2000089043 cites W2088430519 @default.
- W2000089043 cites W2093341177 @default.
- W2000089043 cites W2110871209 @default.
- W2000089043 cites W2117389328 @default.
- W2000089043 cites W2142431775 @default.
- W2000089043 cites W2145209626 @default.
- W2000089043 cites W2149330092 @default.
- W2000089043 cites W2158255246 @default.
- W2000089043 cites W2317210103 @default.
- W2000089043 doi "https://doi.org/10.1016/j.tsf.2012.02.081" @default.
- W2000089043 hasPublicationYear "2012" @default.
- W2000089043 type Work @default.
- W2000089043 sameAs 2000089043 @default.
- W2000089043 citedByCount "79" @default.
- W2000089043 countsByYear W20000890432012 @default.
- W2000089043 countsByYear W20000890432013 @default.
- W2000089043 countsByYear W20000890432014 @default.
- W2000089043 countsByYear W20000890432015 @default.
- W2000089043 countsByYear W20000890432016 @default.
- W2000089043 countsByYear W20000890432017 @default.
- W2000089043 countsByYear W20000890432018 @default.
- W2000089043 countsByYear W20000890432019 @default.
- W2000089043 countsByYear W20000890432020 @default.
- W2000089043 countsByYear W20000890432021 @default.
- W2000089043 countsByYear W20000890432022 @default.
- W2000089043 countsByYear W20000890432023 @default.
- W2000089043 crossrefType "journal-article" @default.
- W2000089043 hasAuthorship W2000089043A5003213056 @default.
- W2000089043 hasAuthorship W2000089043A5069564761 @default.
- W2000089043 hasConcept C113196181 @default.
- W2000089043 hasConcept C119599485 @default.
- W2000089043 hasConcept C120665830 @default.
- W2000089043 hasConcept C121332964 @default.
- W2000089043 hasConcept C127413603 @default.
- W2000089043 hasConcept C131540310 @default.
- W2000089043 hasConcept C147789679 @default.
- W2000089043 hasConcept C159985019 @default.
- W2000089043 hasConcept C171250308 @default.
- W2000089043 hasConcept C185592680 @default.
- W2000089043 hasConcept C19067145 @default.
- W2000089043 hasConcept C192562407 @default.
- W2000089043 hasConcept C201999631 @default.
- W2000089043 hasConcept C22423302 @default.
- W2000089043 hasConcept C2777855556 @default.
- W2000089043 hasConcept C40003534 @default.
- W2000089043 hasConcept C43617362 @default.
- W2000089043 hasConcept C46275449 @default.
- W2000089043 hasConcept C49040817 @default.
- W2000089043 hasConcept C57863236 @default.
- W2000089043 hasConcept C61427134 @default.
- W2000089043 hasConcept C69990965 @default.
- W2000089043 hasConcept C85080765 @default.
- W2000089043 hasConceptScore W2000089043C113196181 @default.
- W2000089043 hasConceptScore W2000089043C119599485 @default.
- W2000089043 hasConceptScore W2000089043C120665830 @default.
- W2000089043 hasConceptScore W2000089043C121332964 @default.